GA05JT06-CAL_15 Datasheet, PDF (1/10 Pages) GeneSiC Semiconductor, Inc. – OFF Silicon Carbide Junction Transistor

Die Datasheet
GA05JT06-CAL
Normally – OFF Silicon Carbide
Junction Transistor
Features
 210°C maximum operating temperature
 Gate Oxide Free SiC switch
 Exceptional Safe Operating Area
 Excellent Gain Linearity
 Temperature Independent Switching Performance
 Low Output Capacitance
 Positive Temperature Co-efficient of R_DS,ON
 Suitable for connecting an anti-parallel diode
V_DS
=
R_DS(ON)
=
I_D @ 25 ^oC =
h_FE
=
600 V
240 mΩ
15 A
110
Die Size = 1.57 mm x 1.57 mm
Advantages
 Compatible with Si MOSFET/IGBT gate-drivers
 > 20 µs Short-Withstand Capability
 Lowest-in-class Conduction Losses
 High Circuit Efficiency
 Minimal Input Signal Distortion
 High Amplifier Bandwidth
Applications
 Down Hole Oil Drilling, Geothermal Instrumentation
 Hybrid Electric Vehicles (HEV)
 Solar Inverters
 Switched-Mode Power Supply (SMPS)
 Power Factor Correction (PFC)
 Induction Heating
 Uninterruptible Power Supply (UPS)
 Motor Drives
Absolute Maximum Ratings (T_C = 25 ^oC unless otherwise specified)
Parameter
Symbol
Conditions
Drain – Source Voltage
Continuous Drain Current
V_DS
V_GS = 0 V
I_D
T_C = 25°C
Continuous Drain Current
I_D
T_C > 125°C, assumes R_thJC < 1.41 ^oC/W
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
I_G
RBSOA
SCSOA
T_VJ = 210 ^oC,
Clamped Inductive Load
T_VJ = 210 ^oC, I_G = 0.2 A, V_DS = 400 V,
Non Repetitive
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Operating Junction and Storage
Temperature
V_SG
V_SD
T_j, T_stg
Maximum Processing Temperature
T_Proc
10 min. maximum
Value
600
15
5
0.25
I_D,max = 5
@ V_DS ≤ V_DSmax
> 20
30
25
-55 to 210
325
Unit
V
A
A
A
A
µs
V
V
°C
°C
Notes
Electrical Characteristics
Parameter
On State Characteristics
Drain – Source On Resistance
Gate – Source Saturation Voltage
DC Current Gain
Off State Characteristics
Drain Leakage Current
Gate Leakage Current
Symbol
Conditions
R_DS(ON)
V_GS,SAT
h_FE
I_D = 5 A, T_j = 25 °C
I_D = 5 A, T_j = 125 °C
I_D = 5 A, T_j = 175 °C
I_D = 5 A, T_j = 210 °C
I_D = 5 A, I_D/I_G = 40, T_j = 25 °C
I_D = 5 A, I_D/I_G = 30, T_j = 175 °C
V_DS = 5 V, I_D = 5 A, T_j = 25 °C
V_DS = 5 V, I_D = 5 A, T_j = 125 °C
V_DS = 5 V, I_D = 5 A, T_j = 175 °C
V_DS = 5 V, I_D = 5 A, T_j = 210 °C
V_R = 600 V, V_GS = 0 V, T_j = 25 °C
I_DSS
V_R = 600 V, V_GS = 0 V, T_j = 125 °C
V_R = 600 V, V_GS = 0 V, T_j = 210 °C
I_SG
V_SG = 20 V, T_j = 25 °C
Min.
Value
Typical
Max. ^Unit
Notes
240
368
455
mΩ Fig. 5
620
3.45
3.22
V
Fig. 4
110
79
72
–
Fig. 5
69
10
100
50
500 nA
100
1000
20
nA
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Pg1 of 9