GA05JT03-46 Datasheet, PDF (1/11 Pages) GeneSiC Semiconductor, Inc. – Normally – OFF Silicon Carbide Junction Transistor

GA05JT03-46
Normally – OFF Silicon Carbide
Junction Transistor
Features
 225°C maximum operating temperature
 Gate Oxide Free SiC Switch
 Exceptional Safe Operating Area
 Excellent Gain Linearity
 Temperature Independent Switching Performance
 Low Output Capacitance
 Positive Temperature Coefficient of RDS,ON
 Suitable for Connecting an Anti-parallel Diode
Package
 RoHS Compliant
D
S^G
TO-46
V_DS
=
R_DS(ON)
=
I_{D (Tc = 25°C)} =
h_{FE (Tc = 25°C)} =
300 V
240 mΩ
9A
110
D
G
S
Advantages
 Compatible with Si MOSFET/IGBT Gate Drive ICs
 > 20 µs Short-Circuit Withstand Capability
 Lowest-in-class Conduction Losses
 High Circuit Efficiency
 Minimal Input Signal Distortion
 High Amplifier Bandwidth
Applications
 Down Hole Oil Drilling
 Geothermal Instrumentation
 Solenoid Actuators
 General Purpose High-Temperature Switching
 Amplifiers
 Solar Inverters
 Switched-Mode Power Supply (SMPS)
 Power Factor Correction (PFC)
Table of Contents
Section I: Absolute Maximum Ratings ...........................................................................................................1
Section II: Electrical Characteristics...............................................................................................................2
Section III: Dynamic Electrical Characteristics .............................................................................................2
Section IV: Figures ...........................................................................................................................................3
Section V: Driving the GA05JT03-46...............................................................................................................7
Section VI: Package Dimensions ................................................................................................................. 10
Section VII: SPICE Model Parameters ......................................................................................................... 11
Section I: Absolute Maximum Ratings
Parameter
Drain – Source Voltage
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Storage Temperature
Symbol
VDS
ID
IGM
RBSOA
SCSOA
VSG
VSD
Ptot
Tstg
Conditions
VGS = 0 V
TJ = 225°C, TC = 25°C
TVJ = 225°C, IG = 0.5 A,
Clamped Inductive Load
TVJ = 225°C, IG = 0.5 A, VDS = 200 V,
Non Repetitive
TJ = 225°C, TC = 25°C
Value
300
5.8
0.5
ID,max = 9
@ VDS ≤ VDSmax
>20
30
25
20
-55 to 225
Unit Notes
V
A
Fig. 21
A
A
Fig. 19
µs
V
V
W Fig. 16
°C
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/
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