GA04JT17-247_15 Datasheet, PDF (1/12 Pages) GeneSiC Semiconductor, Inc. – OFF Silicon Carbide Junction Transistor

Normally – OFF Silicon Carbide
Junction Transistor
Features
• 175 °C Maximum Operating Temperature
• Gate Oxide Free SiC Switch
• Exceptional Safe Operating Area
• Excellent Gain Linearity
• Temperature Independent Switching Performance
• Low Output Capacitance
• Positive Temperature Coefficient of RDS,ON
• Suitable for Connecting an Anti-parallel Diode
Advantages
• Compatible with Si MOSFET/IGBT Gate Drive ICs
• > 20 µs Short-Circuit Withstand Capability
• Lowest-in-class Conduction Losses
• High Circuit Efficiency
• Minimal Input Signal Distortion
• High Amplifier Bandwidth
Package
D
GA04JT17-247
V_DS
=
R_DS(ON)
=
I_{D (Tc = 25°C)}
=
I_{D (Tc > 125°C)}
=
h_{FE (Tc = 25°C)} =
1700 V
180 mΩ
15 A
5A
100
S
D
G
TO-247
Applications
• Down Hole Oil Drilling, Geothermal Instrumentation
• Hybrid Electric Vehicles (HEV)
• Solar Inverters
• Switched-Mode Power Supply (SMPS)
• Power Factor Correction (PFC)
• Induction Heating
• Uninterruptible Power Supply (UPS)
• Motor Drives
Table of Contents
Section I: Absolute Maximum Ratings ...........................................................................................................1
Section II: Static Electrical Characteristics....................................................................................................2
Section III: Dynamic Electrical Characteristics .............................................................................................2
Section IV: Figures ...........................................................................................................................................3
Section V: Driving the GA04JT17-247.............................................................................................................7
Section VI: Package Dimensions ................................................................................................................. 11
Section VII: SPICE Model Parameters ......................................................................................................... 12
Section I: Absolute Maximum Ratings
Parameter
Drain – Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Storage Temperature
Symbol
VDS
ID
ID
IG
RBSOA
SCSOA
VSG
VSD
Ptot
Tstg
VGS = 0 V
TC = 25°C
TC = 160°C
Conditions
TVJ = 175 ^oC,
Clamped Inductive Load
TVJ = 175 ^oC, IG = 0.2 A, VDS = 1200 V,
Non Repetitive
TC = 25 °C / 160 °C, tp > 100 ms
Value
1700
15
4
0.25
ID,max = 4
@ VDS ≤ VDSmax
>20
30
25
106 / 10
-55 to 175
Unit Notes
V
A
Fig. 17
A
Fig. 17
A
A
Fig. 19
µs
V
V
W Fig. 16
°C
Jan 2015
Latest version of this datasheet at: http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
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