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| GA040TH65-CAU Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide Thyristor | |||
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Silicon Carbide Thyristor
Features
⢠6500 V Asymmetric SiC NPNP Thyristor
⢠250 °C operating temperature
⢠Fast turn on characteristics
⢠Lowest in class Qrr/IT(AVM)
Applications
⢠Grid Tied Solar Inverters
⢠Wind Power Inverters
⢠HVDC Power Conversion
⢠Utility Scale Power Conversion
⢠Trigger Circuits/Ignition Circuits
Maximum Ratings
Parameter
Repetitive peak forward voltage
Repetitive peak reverse voltage
Maximum average on-state current
RMS on-state current
Operating and storage temperature
Electrical Characteristics
Parameter
Maximum peak on state voltage
Anode-cathode threshold voltage
Anode-cathode slope resistance
Leakage current
Gate trigger current
Holding current
Rise time
Delay time
Reverse recovery charge
Recovered charge, 50% chord
Reverse recovery current
Circuit commutated turn-off time
Electrical Datasheet GA040TH65-CAU
VFBM
IT(AVM)
Qrr
= 6500 V
= 40 A
= 1.8 µC
Symbol
VFBM
VRBM
IT(AVM)
IT(RMS)
Tj, Tstg
Conditions
Tj = 25 °C
Tj = 25 °C
TC ⤠120 °C
TC ⤠120 °C
Values
Unit
6500
V
50
V
40
A
69
A
-55 to 250
°C
Symbol
VKA(ON)
VKA(TO)
RAK
IL
IGT
IH
tR
tD
Qrr
Qra
Irm
tq
Conditions
IK = -40 A, Tj = 25 °C
IK = -40 A, Tj = 150 °C
Tj = 25 °C (150 °C)
Tj = 25 °C (150 °C), IK = -40 A
VKA = -6500 V, VGA = 0 V, Tj = 25 °C
VKA = -6500 V, VGA = 0 V, Tj = 150 °C
Tj = 25 °C, tP = 10 µs
Tj = 25 °C
IG = -3 A, VKA = -2500 V
IK = -40 A, Tj = 25 °C
dI/dt = 270 A/us, IK = -40 A, VKA = 20 V
dV/dt(re-app) = -500 V/us, Tj = 25 °C
Values
min. typ. max.
Unit
-4.30
-3.90
V
-3.1(-2.8)
V
20(21)
mâ¦
15
30
µA
-30
mA
780
mA
200
ns
40
ns
1.8
µC
0.6
µC
11
A
4.7
µs
November 2013
http://www.genesicsemi.com/index.php/hit-sic/baredie
Page 1 of 3
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