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GA03JT12-247 Datasheet, PDF (1/11 Pages) GeneSiC Semiconductor, Inc. – Normally – OFF Silicon Carbide Junction Transistor | |||
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GA03JT12-247
Normally â OFF Silicon Carbide
Junction Transistor
Features
ï· 175 °C Maximum Operating Temperature
ï· Gate Oxide Free SiC Switch
ï· Exceptional Safe Operating Area
ï· Excellent Gain Linearity
ï· Temperature Independent Switching Performance
ï· Low Output Capacitance
ï· Positive Temperature Coefficient of RDS,ON
ï· Suitable for Connecting an Anti-parallel Diode
Package
ï· RoHS Compliant
D
DS
G
TO-247AB
VDS
=
RDS(ON)
=
ID @ Tc=150°C =
hFE Tc=25°C =
1200 V
470 mâ¦
3A
54
D
G
S
Advantages
ï· Compatible with Si MOSFET/IGBT Gate Drive ICs
ï· > 20 µs Short-Circuit Withstand Capability
ï· Lowest-in-class Conduction Losses
ï· High Circuit Efficiency
ï· Minimal Input Signal Distortion
ï· High Amplifier Bandwidth
Applications
ï· Down Hole Oil Drilling, Geothermal Instrumentation
ï· Hybrid Electric Vehicles (HEV)
ï· Solar Inverters
ï· Switched-Mode Power Supply (SMPS)
ï· Power Factor Correction (PFC)
ï· Induction Heating
ï· Uninterruptible Power Supply (UPS)
ï· Motor Drives
Absolute Maximum Ratings
Parameter
Drain â Source Voltage
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate â Source Voltage
Reverse Drain â Source Voltage
Power Dissipation
Storage Temperature
Symbol
VDS
ID
IGM
RBSOA
SCSOA
VSG
VSD
Ptot
Tstg
Conditions
VGS = 0 V
TC = 150 °C
TVJ = 175 oC, IG = 1 A,
Clamped Inductive Load
TVJ = 175 oC, IG = 1 A, VDS = 800 V,
Non Repetitive
TC = 150 °C
Value
1200
3
1
ID,max = 3
@ VDS ⤠VDSmax
20
30
25
15
-55 to 175
Unit Notes
V
Fig. 6
A
Fig. 19
A
A
Fig. 16
µs
V
V
W
Fig. 14
°C
Electrical Characteristics
Parameter
On State Characteristics
Drain â Source On Resistance
Gate Forward Voltage
DC Current Gain
Off State Characteristics
Drain Leakage Current
Gate Leakage Current
Symbol
Conditions
Min.
Value
Typical
Max. Unit
Notes
RDS(ON)
VGS(FWD)
hFE
ID = 3 A, Tj = 25 °C
ID = 3 A, Tj = 125 °C
ID = 3 A, Tj = 175 °C
IG = 500 mA, Tj = 25 °C
IG = 500 mA, Tj = 175 °C
VDS = 5 V, ID = 3 A, Tj = 25 °C
VDS = 5 V, ID = 3 A, Tj = 175 °C
470
530
mâ¦
Fig. 5
730
3.3
3.1
V
Fig. 4
54
32
â
Fig. 5
VR = 1200 V, VGS = 0 V, Tj = 25 °C
IDSS
VR = 1200 V, VGS = 0 V, Tj = 125 °C
VR = 1200 V, VGS = 0 V, Tj = 175 °C
ISG
VSG = 20 V, Tj = 25 °C
0.1
10
0.2
50 μA
Fig. 6
0.5
100
20
nA
Aug 2014
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
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