GA03IDDJT30-FR4 Datasheet, PDF (1/9 Pages) GeneSiC Semiconductor, Inc. – Isolated Gate Driver

Isolated Gate Driver
Gate Driver for SiC SJT with Output
and Signal Isolation
Features
 Requires single 12 V voltage supply
 Pin Out compatible with MOSFET driver boards
 Multiple Internal level topology for low drive losses
 High-side drive capable with 3000 V isolation
 5000 V Signal Isolation (up to 10 s)
 Capable of high gate currents with 3 W maximum power
 RoHS Compliant
Product Image
GA03IDDJT30-FR4
V_ISOLATION
P_DRIVE
f_max
= 3000 V
= 5W
= 350 kHz
Section I: Introduction
The GA03IDDJT30-FR4 provides an optimized gate drive solution for SiC Junction Transistors (SJT). The board utilizes DC/DC converters
and FOD3182 opto-isolators making it capable of driving high and low-side devices in a half-bridge configuration as well as IXDN609 gate
driver ICs providing fast switching and customizable continuous gate currents necessary for SJT devices. Its footprint and 12 V supply voltage
make it a plug-in replacement for existing SiC MOSFET gate drive solutions.
Figure 1: Simplified GA03IDDJT30-FR4 Gate Drive Board Block Diagram
Section II: Compatibility with SiC SJTs
The GA03IDDJT30-FR4 has an installed R_G of 3.75 Ω on-board which may need to be modified by the user for safe operation of certain SJT
parts. Please see the table below and Section VII for more information.
Table 1: GA03IDDJT30-FR4 – SiC SJT Compatibility Information Table
SJT Part Number
Compatible
Requires R_G Modification
GA03JT12-247
GA05JT12-247/263
GA06JT12-247
GA10JT12-247/263
GA20JT12-247/263
GA50JT12-247
GA04JT17-247
GA16JT17-247
GA50JT17-247
Not Required
Not Required
Not Required
Recommended (see Section VII)
Yes
Required (see Section VII)
Required (see Section VII)
Not Required
Required (see Section VII)
Required (see Section VII)
Nov. 2014
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
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