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GA01PNS80-CAL Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide PiN Diode Chip | |||
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Silicon Carbide
PiN Diode Chip
Features
ï· 8 kV blocking
ï· 250 °C operating temperature
ï· Fast turn off characteristics
ï· Soft reverse recovery characteristics
ï· Ultra-Fast high temperature switching
Electrical Datasheet*
GA01PNS80-CAL
Advantages
ï· Industryâs lowest conduction losses
ï· Reduced stacking
ï· Reduced system complexity/Increased reliability
Applications
ï· Voltage Multiplier
ï· Ignition/Trigger Circuits
ï· Oil/Downhole
ï· Lighting
ï· Defense
Maximum Ratings at Tj = 250 °C, unless otherwise specified
Parameter
Symbol
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Operating and storage temperature
VRRM
IF
IF(RMS)
Tj , Tstg
Conditions
TC ⤠150 °C
TC ⤠150 °C
Values
Unit
8
kV
2
A
1
A
-55 to 250
°C
Electrical Characteristics at Tj = 250 °C, unless otherwise specified
Parameter
Symbol
Conditions
Diode forward voltage
Reverse current
Total reverse recovery charge
Switching time
Total capacitance
Total capacitive charge
VF
IF = 2 A, Tj = 25 °C
IF = 2 A, Tj = 225 °C
IR
VR = 8 kV, Tj = 25 °C
VR = 8 kV, Tj = 175 °C
Qrr
ts
IF ⤠IF,MAX
dIF/dt = 70 A/μs
Tj = 225 °C
VR = 1000 V
IF = 1.5 A
VR = 1000 V
IF = 1.5 A
VR = 1 V, f = 1 MHz, Tj = 25 °C
C
VR = 400 V, f = 1 MHz, Tj = 25 °C
VR = 1000 V, f = 1 MHz, Tj = 25 °C
QC
VR = 1000 V, f = 1 MHz, Tj = 25 °C
min.
Values
typ.
4.6
3.9
0.1
558
< 236
20
5
4
5.34
max.
4.8
4.5
3
50
Unit
V
µA
nC
ns
pF
nC
*For chip size and metallization, please refer to the mechanical datasheet (must have a non-disclosure agreement with GeneSiC
Semiconductor).
Feb 2013
http://www.genesicsemi.com/index.php/hit-sic/baredie
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