GA01PNS80-220 Datasheet, PDF (1/5 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide PiN Diode

Silicon Carbide
PiN Diode
Features
 8 kV blocking
 175 °C operating temperature
 Fast turn off characteristics
 Soft reverse recovery characteristics
 Ultra-Fast high temperature switching
Package
 RoHS Compliant
GA01PNS80-220
V_RRM
I_{F (Tc=25°C)}
= 8.0 kV
= 2A
PIN 1
2
1
PIN 2
Advantages
 Reduced stacking
 Reduced system complexity/Increased reliability
Applications
 Voltage Multiplier
 Ignition/Trigger Circuits
 Oil/Downhole
 Lighting
 Defense
Maximum Ratings at Tj = 175 °C, unless otherwise specified
Parameter
Symbol
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Operating and storage temperature
VRRM
IF
IF(RMS)
Tj , Tstg
Conditions
Values
8
2
1
-55 to 175
Electrical Characteristics at Tj = 175 °C, unless otherwise specified
Parameter
Symbol
Conditions
Diode forward voltage
Reverse current
Total reverse recovery charge
Switching time
Total capacitance
Total capacitive charge
VF
IF = 2 A, Tj = 25 °C
IF = 2 A, Tj = 175 °C
IR
VR = 8 kV, Tj = 25 °C
VR = 8 kV, Tj = 175 °C
Qrr
ts
IF ≤ IF,MAX
dIF/dt = 70 A/μs
Tj = 175 °C
VR = 1000 V
IF = 1.5 A
VR = 1000 V
IF = 1.5 A
VR = 1 V, f = 1 MHz, Tj = 25 °C
C
VR = 400 V, f = 1 MHz, Tj = 25 °C
VR = 1000 V, f = 1 MHz, Tj = 25 °C
QC
VR = 1000 V, f = 1 MHz, Tj = 25 °C
min.
Values
typ.
6.1
4.7
4
4
558
< 236
26
5
4
5.4
max.
Unit
kV
A
A
°C
Unit
V
µA
nC
ns
pF
nC
Apr 2015
http://www.genesicsemi.com/commercial-sic/sic-ultra-high-voltage-pin-thyristors/
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