GA01PNS100-CAL_15 Datasheet, PDF (1/6 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide PiN Diode Chip

Silicon Carbide
PiN Diode Chip
Die Datasheet
GA01PNS100-CAL
V_RRM
I_F @ 25 ^oC
Q_C
= 10000 V
= 2A
= 5 nC
Features
 10 kV blocking
 210 °C operating temperature
 Fast turn off characteristics
 Soft reverse recovery characteristics
 Ultra-Fast high temperature switching
Advantages
 Industry’s lowest conduction losses
 Reduced stacking
 Reduced system complexity/Increased reliability
Die Size = 2.4 mm x 2.4 mm
Applications
 Voltage Multiplier
 Ignition/Trigger Circuits
 Oil/Downhole
 Lighting
 Defense
Maximum Ratings at T_j = 210 °C, unless otherwise specified
Parameter
Symbol
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Operating and storage temperature
V_RRM
I_F
I_F(RMS)
T_j , T_stg
Conditions
T_C ≤ 150 °C
T_C ≤ 150 °C
Values
10
2
1
-55 to 210
Electrical Characteristics at T_j = 210 °C, unless otherwise specified
Parameter
Symbol
Conditions
Diode forward voltage
Reverse current
Total reverse recovery charge
Switching time
Total capacitance
Total capacitive charge
V_F
I_F = 2 A, T_j = 25 °C
I_F = 2 A, T_j = 210 °C
I_R
V_R = 10 kV, T_j = 25 °C
V_R = 10 kV, T_j = 210 °C
Q_rr
t_s
I_F ≤ I_F,MAX
dI_F/dt = 70 A/μs
T_j = 210 °C
V_R = 1000 V
I_F = 1.5 A
V_R = 1000 V
I_F = 1.5 A
V_R = 1 V, f = 1 MHz, T_j = 25 °C
C
V_R = 400 V, f = 1 MHz, T_j = 25 °C
V_R = 1000 V, f = 1 MHz, T_j = 25 °C
Q_C
V_R = 1000 V, f = 1 MHz, T_j = 25 °C
min.
Values
typ.
4.4
4.1
0.1
558
< 236
20
5
4
5
max.
4.8
4.5
3
50
Unit
kV
A
A
°C
Unit
V
µA
nC
ns
pF
nC
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
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