FST8345M Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Power Schottky Diode

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100V V_RRM
• Not ESD Sensitive
FST8345M thru FST83100M
V_RRM = 45 V - 100 V
I_F(AV) = 80 A
D61-3M Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
FST8345M FST8360M FST8380M FST83100M Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
45
60
80
100
V
32
42
56
70
V
45
60
80
100
V
-55 to 150 -55 to 150 -55 to 150 -55 to 150
°C
-55 to 150 -55 to 150 -55 to 150 -55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
FST8345M FST8360M FST8380M FST83100M Unit
Average forward current (per
pkg)
Peak forward surge current (per
leg)
Maximum instantaneous
forward voltage (per leg)
Maximum Instantaneous
reverse current at rated DC
blocking voltage (per leg)
Thermal characteristics
Thermal resistance, junction -
case (per leg)
I_F(AV)
I_FSM
V_F
I_R
R_ΘJC
T_C = 125 °C
t_p = 8.3 ms, half sine
I_FM = 40 A, T_j = 25 °C
T_j = 25 °C
T_j = 100 °C
T_j = 150 °C
80
600
0.72
1
10
30
1.10
80
80
80
A
600
600
600
A
0.78
0.84
0.84
V
1
1
1
10
10
10
mA
30
30
30
1.10
1.10
1.10
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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