FST7345M Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Power Schottky Diode

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100V V_RRM
• Not ESD Sensitive
FST7345M thru FST73100M
V_RRM = 45 V - 100 V
I_F(AV) = 70 A
D61-3M Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
FST7345M FST7360M FST7380M FST73100M Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
45
60
80
100
V
32
42
56
70
V
45
60
80
100
V
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
FST7345M FST7360M FST7380M FST73100M Unit
Average forward current (per
pkg)
I_F(AV)
T_C = 125 °C
70
70
70
70
A
Peak forward surge current (per
leg)
I_FSM
t_p = 8.3 ms, half sine
600
600
600
600
A
Maximum instantaneous
forward voltage (per leg)
V_F
I_FM = 35 A, T_j = 25 °C
0.70
0.75
0.84
0.84
V
Maximum Instantaneous
reverse current at rated DC
I_R
blocking voltage (per leg)
T_j = 25 °C
T_j = 100 °C
T_j = 150 °C
1
1
1
1
10
10
10
10
mA
30
30
30
30
Thermal characteristics
Thermal resistance, junction -
case (per leg)
R_ΘJC
1.10
1.10
1.10
1.10
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1