FST6340M Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Power Schottky Diode

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 40 V to 100 V V_RRM
• Not ESD Sensitive
FST6340M thru FST63100M
V_RRM = 40 V - 100 V
I_F(AV) = 60 A
D61-3M Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
FST6340M FST6345M FST6360M FST6380M FST63100M Unit
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
40
45
60
80
100
V
28
32
42
56
70
V
40
45
60
80
100
V
-55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
-55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
FST6340M FST6345M FST6360M FST6380M FST63100M Unit
Average forward current (per
pkg)
Peak forward surge current
(per leg)
Maximum instantaneous
forward voltage (per leg)
Maximum Instantaneous
reverse current at rated DC
blocking voltage (per leg)
Thermal characteristics
Thermal resistance, junction -
case (per leg)
I_F(AV)
I_FSM
V_F
I_R
R_ΘJC
T_C = 125 °C
t_p = 8.3 ms, half sine
I_FM = 30 A, T_j = 25 °C
T_j = 25 °C
T_j = 100 °C
T_j = 150 °C
60
600
0.70
1
10
30
1.20
60
600
7.0
1
10
30
1.20
60
600
0.75
1
10
30
1.20
60
600
0.84
1
10
30
1.20
60
A
600
A
0.84
V
1
10
mA
30
1.20
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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