FST16045 Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Power Schottky Diode

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100V V_RRM
• Isolated to Plate
• Not ESD Sensitive
FST16045 thru FST160100
V_RRM = 45 V - 100 V
I_F(AV) = 160 A
TO-249AB Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
FST16045 FST16060 FST16080 FST160100 Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
45
60
80
100
V
32
42
57
70
V
45
60
80
100
V
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
FST16045
Average forward current (per
pkg)
Peak forward surge current (per
leg)
Maximum instantaneous
forward voltage (per leg)
Maximum Instantaneous
reverse current at rated DC
blocking voltage (per leg)
Thermal characteristics
Thermal resistance, junction -
case (per leg)
I_F(AV)
I_FSM
V_F
I_R
R_ΘJC
T_C = 125 °C
t_p = 8.3 ms, half sine
I_FM = 80 A, T_j = 25 °C
T_j = 25 °C
T_j = 100 °C
T_j = 150 °C
160
1000
0.75
1
10
30
0.50
FST16060
160
1000
0.80
1
10
30
0.50
FST16080 FST160100 Unit
160
160
A
1000
1000
A
0.84
0.84
V
1
1
10
10
mA
30
30
0.50
0.50
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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