FST120150 Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Power Schottky Diode

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 150 V to 200V V_RRM
• Isolated to Plate
• Not ESD Sensitive
FST120150 thru FST120200
V_RRM = 150 V - 200 V
I_F(AV) = 120 A
TO-249AB Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
FST120150
150
106
150
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
FST120150
Average forward current (per
pkg)
Peak forward surge current (per
leg)
Maximum instantaneous
forward voltage (per leg)
Maximum Instantaneous
reverse current at rated DC
blocking voltage (per leg)
Thermal characteristics
Thermal resistance, junction -
case (per leg)
I_F(AV)
I_FSM
V_F
I_R
R_ΘJC
T_C = 125 °C
t_p = 8.3 ms, half sine
I_FM = 60 A, T_j = 25 °C
T_j = 25 °C
T_j = 100 °C
T_j = 150 °C
120
1000
0.88
1
10
30
0.80
FST120200
200
141
200
-55 to 150
-55 to 150
FST120200
120
1000
0.92
1
10
30
0.80
Unit
V
V
V
°C
°C
Unit
A
A
V
mA
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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