FST10040 Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – High Surge Capability

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 20 V to 40V V_RRM
• Isolated to Plate
• Not ESD Sensitive
FST10020 thru FST10040
V_RRM = 20 V - 40 V
I_F(AV) = 100 A
TO-249AB Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
FST10020 FST10030 FST10035 FST10040 Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
20
30
35
40
V
14
21
25
28
V
20
30
35
40
V
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
FST10020
Average forward current (per
pkg)
Peak forward surge current (per
leg)
Maximum instantaneous
forward voltage (per leg)
Maximum Instantaneous
reverse current at rated DC
blocking voltage (per leg)
Thermal characteristics
Thermal resistance, junction -
case (per leg)
I_F(AV)
I_FSM
V_F
I_R
R_ΘJC
T_C = 125 °C
t_p = 8.3 ms, half sine
I_FM = 50 A, T_j = 25 °C
T_j = 25 °C
T_j = 100 °C
T_j = 150 °C
100
1000
0.70
1
10
30
1.0
FST10030
100
1000
0.70
1
10
30
1.0
FST10035 FST10040
100
100
1000
1000
0.70
0.70
1
1
10
10
30
30
1.0
1.0
Unit
A
A
V
mA
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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