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FST100150 Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Power Schottky Diode
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 150 V to 200V VRRM
• Isolated to Plate
• Not ESD Sensitive
FST100150 thru FST100200
VRRM = 150 V - 200 V
IF(AV) = 100 A
TO-249AB Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
VRRM
VRMS
VDC
Tj
Tstg
FST100150
150
106
150
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
FST100150
Average forward current (per
pkg)
Peak forward surge current (per
leg)
Maximum instantaneous
forward voltage (per leg)
Maximum Instantaneous
reverse current at rated DC
blocking voltage (per leg)
Thermal characteristics
Thermal resistance, junction -
case (per leg)
IF(AV)
IFSM
VF
IR
RΘJC
TC = 125 °C
tp = 8.3 ms, half sine
IFM = 50 A, Tj = 25 °C
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
100
1000
0.88
1
10
30
1.10
FST100200
200
141
200
-55 to 150
-55 to 150
FST100200
100
1000
0.92
1
10
30
1.10
Unit
V
V
V
°C
°C
Unit
A
A
V
mA
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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