FR85JR02 Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – High Surge Capability

Silicon Fast
Recovery Diode
Features
• High Surge Capability
• Types from 100 V to 600 V V_RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
FR85B02 thru FR85JR02
V_RRM = 100 V - 600 V
I_F = 85 A
DO-5 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
FR85B(R)02 FR85D(R)02 FR85G(R)02
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
V_RRM
V_RMS
V_DC
100
200
400
70
140
280
100
200
400
Continuous forward current
I_F
T_C ≤ 100 °C
85
85
85
FR85J(R)02 Unit
600
V
420
V
600
V
85
A
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
I_F,SM T_C = 25 °C, t_p = 8.3 ms
T_j
T_stg
1369
-55 to 150
-55 to 150
1369
-55 to 150
-55 to 150
1369
-55 to 150
-55 to 150
1369
A
-55 to 150
°C
-55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
FR85B(R)02 FR85D(R)02
Diode forward voltage
V_F
I_F = 85 A, T_j = 25 °C
1.3
1.3
Reverse current
I_R
V_R = 100 V, T_j = 25 °C
V_R = 100 V, T_j = 125 °C
25
20
25
20
Recovery Time
Maximum reverse recovery
time
T_RR
I_F=0.5 A, I_R=1.0 A,
I_RR= 0.25 A
200
200
FR85G(R)02
1.3
25
20
200
FR85J(R)02 Unit
1.3
V
25
μA
20
mA
250
nS
www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
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