FR70K05 Datasheet, PDF (1/3 Pages) America Semiconductor, LLC – High Power- Fast Recovery Rectifiers

Silicon Fast
Recovery Diode
Features
• High Surge Capability
• Types from 800 V to 1000 V V_RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
FR70K05 thru FR70MR05
V_RRM = 800 V - 1000 V
I_F = 70 A
DO-5 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
FR70K(R)05
FR70M(R)05
Unit
Repetitive peak reverse
voltage
V_RRM
800
RMS reverse voltage
V_RMS
560
DC blocking voltage
V_DC
800
Continuous forward current
I_F
T_C ≤ 100 °C
70
1000
V
700
V
1000
V
70
A
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
I_F,SM T_C = 25 °C, t_p = 8.3 ms
T_j
T_stg
870
-55 to 150
-55 to 150
870
A
-55 to 150
°C
-55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
FR70K(R)05
Diode forward voltage
V_F
I_F = 70 A, T_j = 25 °C
1.0
Reverse current
I_R
V_R = 100 V, T_j = 25 °C
V_R = 100 V, T_j = 125 °C
25
15
Recovery Time
Maximum reverse recovery
time
T_RR
I_F=0.5 A, I_R=1.0 A,
I_RR= 0.25 A
500
FR70M(R)05
Unit
1.0
V
25
μA
15
mA
500
nS
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