FR6JR02 Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – High Surge Capability

Silicon Fast
Recovery Diode
Features
• High Surge Capability
• Types up to 600 V V_RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
FR6A02 thru FR6JR02
V_RRM = 50 V - 600 V
I_F = 6 A
DO-4 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
FR6A(R)02 FR6B(R)02 FR6D(R)02 FR6G(R)02 FR6J(R)02 Unit
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
V_RRM
V_RMS
V_DC
I_F
T_C ≤ 100 °C
50
100
200
400
600
V
35
70
140
280
420
V
50
100
200
400
600
V
6
6
6
6
6
A
Surge non-repetitive forward
current, Half Sine Wave
I_F,SM
T_C = 25 °C, t_p = 8.3 ms
135
135
135
135
135
A
Operating temperature
T_j
Storage temperature
T_stg
-55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
-55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
FR6A(R)02 FR6B(R)02 FR6D(R)02 FR6G(R)02 FR6J(R)02 Unit
Diode forward voltage
Reverse current
V_F
I_F = 6 A, T_j = 25 °C
1.4
I_R
V_R = 50 V, T_j = 25 °C
V_R = 50 V, T_j = 150 °C
25
6
Recovery Time
Maximum reverse recovery
time
T_RR
I_F=0.5 A, I_R=1.0 A,
I_RR= 0.25 A
200
Thermal characteristics
Thermal resistance, junction
- case
R_thJC
2.5
1.4
1.4
1.4
25
25
25
6
6
6
200
200
200
2.5
2.5
2.5
1.4
V
25
μA
6
mA
250
nS
2.5 °C/W
www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
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