FR12MR05 Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – High Surge Capability

Silicon Fast
Recovery Diode
Features
• High Surge Capability
• Types from 800 V to 1000 V V_RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
FR12K05 thru FR12MR05
V_RRM = 800 V - 1000 V
I_F = 12 A
DO-4 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
FR12K(R)05
FR12M(R)05
Repetitive peak reverse
voltage
V_RRM
800
RMS reverse voltage
V_RMS
560
DC blocking voltage
V_DC
800
Continuous forward current
I_F
T_C ≤ 100 °C
12
1000
700
1000
12
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
I_F,SM T_C = 25 °C, t_p = 8.3 ms
T_j
T_stg
180
-55 to 150
-55 to 150
180
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
FR12K(R)05
Diode forward voltage
Reverse current
V_F
I_F = 12 A, T_j = 25 °C
0.8
I_R
V_R = 100 V, T_j = 25 °C
V_R = 100 V, T_j = 150 °C
25
6
Recovery Time
Maximum reverse recovery
time
T_RR
I_F=0.5 A, I_R=1.0 A,
I_RR= 0.25 A
500
Thermal characteristics
Thermal resistance, junction
- case
R_thJC
2.0
FR12M(R)05
0.8
25
6
500
2.0
Unit
V
V
V
A
A
°C
°C
Unit
V
μA
mA
nS
°C/W
www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
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