DB155G Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Bridge Rectifier

Single Phase Glass Passivated
Silicon Bridge Rectifier
DB155G thru DB157G
V_RRM = 600 V - 1000 V
I_O = 1.5 A
Features
• Ideal for printed circuit board
• Reliable low cost construction utilizing molded
plastic technique
• High surge current capability
• Small size, simple installation
• Types from 600 V up to 1000 V V_RRM
• Not ESD Sensitive
Mechanical Data
Case: Molded plastic
Terminals: Plated terminals, solderable per MIL-STD-
202, Method 208
Polarity: Polarrity symbols marked on the body
Mounting position: Any
DB Package
Maximum ratings at Tc = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
DB155G
600
420
600
-55 to 150
-55 to 150
Electrical characteristics at Tc = 25 °C, unless otherwise specified
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
Parameter
Symbol
Conditions
DB155G
Maximum average forward
rectified current
I_O
T_a = 40 °C
1.5
Peak forward surge current
I_FSM
t_p = 8.3 ms, half sine
50
Maximum instantaneous forward
voltage drop
V_F
I_F = 1.5 A
1.1
Maximum DC reverse current at
rated DC blocking voltage
I_R
T_a = 25 °C
T_a = 125 °C
5
500
Rating for fusing
I²t
t < 8.3 ms
10
Typical junction capacitance
C_j
14
Typical thermal resistance
R_ΘJA
36
DB156G
DB157G
Unit
800
1000
V
560
700
V
800
1000
V
-55 to 150
-55 to 150
°C
-55 to 150
-55 to 150
°C
DB156G
1.5
50
1.1
5
500
10
14
36
DB157G
Unit
1.5
A
50
A
1.1
V
5
μA
500
10
10 ^A2sec
14
pF
36
°C/W
www.genesicsemi.com/silicon-products/bridge-rectifiers/
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