DB107G Datasheet, PDF (1/3 Pages) America Semiconductor, LLC – BRIDGE RECTIFIERS

Single Phase Glass Passivated
Silicon Bridge Rectifier
DB105G thru DB107G
V_RRM = 600 V - 1000 V
I_O = 1 A
Features
• Ideal for printed circuit board
• Reliable low cost construction utilizing molded
plastic technique
• High surge current capability
• Small size, simple installation
• Types from 600 V up to 1000 V V_RRM
• Not ESD Sensitive
Mechanical Data
Case: Molded plastic
Terminals: Plated terminals, solderable per MIL-STD-
202, Method 208
Polarity: Polarrity symbols marked on the body
Mounting position: Any
DB Package
Maximum ratings at Tc = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
DB105G
600
420
600
-55 to 150
-55 to 150
Electrical characteristics at Tc = 25 °C, unless otherwise specified
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
Parameter
Symbol
Conditions
DB105G
Maximum average forward
rectified current
I_O
T_a = 40 °C
1.0
Peak forward surge current
I_FSM
t_p = 8.3 ms, half sine
30
Maximum instantaneous forward
voltage drop
V_F
I_F = 1.0 A
1.1
Maximum DC reverse current at
rated DC blocking voltage
I_R
T_a = 25 °C
T_a = 125 °C
5
500
Typical junction capacitance
C_j
25
Typical thermal resistance
R_ΘJC
20
DB106G
800
560
800
-55 to 150
-55 to 150
DB107G
1000
700
1000
-55 to 150
-55 to 150
DB106G
1.0
30
1.1
5
500
25
20
DB107G
1.0
30
1.1
5
500
25
20
Unit
V
V
V
°C
°C
Unit
A
A
V
μA
pF
°C/W
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