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2N7639-GA Datasheet, PDF (1/10 Pages) GeneSiC Semiconductor, Inc. – Normally – OFF Silicon Carbide Junction Transistor | |||
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2N7639-GA
Normally â OFF Silicon Carbide
Junction Transistor
Features
ï· 225°C maximum operating temperature
ï· Electrically Isolated Base Plate
ï· Gate Oxide Free SiC Switch
ï· Exceptional Safe Operating Area
ï· Excellent Gain Linearity
ï· Temperature Independent Switching Performance
ï· Low Output Capacitance
ï· Positive Temperature Coefficient of RDS,ON
ï· Suitable for Connecting an Anti-parallel Diode
Advantages
ï· Compatible with Si MOSFET/IGBT Gate Drive ICs
ï· > 20 µs Short-Circuit Withstand Capability
ï· Lowest-in-class Conduction Losses
ï· High Circuit Efficiency
ï· Minimal Input Signal Distortion
ï· High Amplifier Bandwidth
Package
ï· RoHS Compliant
VDS
=
RDS(ON)
=
ID (Tc = 25°C) =
hFE (Tc = 25°C) =
600 V
60 mâ¦
32 A
80
D
G
GDS
S
TO â 257 (Isolated Base-plate Hermetic Package)
Applications
ï· Down Hole Oil Drilling
ï· Geothermal Instrumentation
ï· Solenoid Actuators
ï· General Purpose High-Temperature Switching
ï· Amplifiers
ï· Solar Inverters
ï· Switched-Mode Power Supply (SMPS)
ï· Power Factor Correction (PFC)
Table of Contents
Section I: Absolute Maximum Ratings ...........................................................................................................1
Section II: Static Electrical Characteristics....................................................................................................2
Section III: Dynamic Electrical Characteristics .............................................................................................2
Section IV: Figures ...........................................................................................................................................3
Section V: Driving the 2N7639-GA ..................................................................................................................6
Section VI: Package Dimensions ....................................................................................................................9
Section VII: SPICE Model Parameters ......................................................................................................... 10
Section I: Absolute Maximum Ratings
Parameter
Drain â Source Voltage
Continuous Drain Current
Gate Peak Current
Turn-Off Safe Operating Area
Symbol
VDS
ID
IGM
RBSOA
Short Circuit Safe Operating Area
Reverse Gate â Source Voltage
Reverse Drain â Source Voltage
Power Dissipation
Operating and Storage Temperature
SCSOA
VGS
VDS
Ptot
Tj, Tstg
Conditions
VGS = 0 V
TJ = 225°C, TC = 25°C
TVJ = 225°C, IG = 1.5 A,
Clamped Inductive Load
TVJ = 225°C, IG = 1.5 A, VDS = 400 V,
Non Repetitive
TJ = 225°C, TC = 25°C
Values
600
32
2
ID,max = 32
@ VDS ⤠VDSmax
>20
30
40
172
-55 to 225
Unit
V
A
A
A
µs
V
V
W
°C
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/
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