1N8026-GA Datasheet, PDF (1/5 Pages) GeneSiC Semiconductor, Inc. – Power Schottky Diode

1N8026-GA
High Temperature Silicon Carbide
Power Schottky Diode
Features
 1200 V Schottky rectifier
 250 °C maximum operating temperature
 Electrically isolated base-plate
 Zero reverse recovery charge
 Superior surge current capability
 Positive temperature coefficient of VF
 Temperature independent switching behavior
 Lowest figure of merit QC/IF
 Available screened to Mil-PRF-19500
Package
 RoHS Compliant
V_RRM
I_{F (Tc=25°C)}
Q_C
= 1200 V
= 8A
= 17 nC
PIN 1
PIN 2
NC
PIN 3
123
TO – 257 (Isolated Base-plate Hermetic Package)
Advantages
 High temperature operation
 Improved circuit efficiency (Lower overall cost)
 Low switching losses
 Ease of paralleling devices without thermal runaway
 Smaller heat sink requirements
 Industry’s lowest reverse recovery charge
 Industry’s lowest device capacitance
 Ideal for output switching of power supplies
 Best in class reverse leakage current at operating temperature
Applications
 Down Hole Oil Drilling
 Geothermal Instrumentation
 Solenoid Actuators
 General Purpose High-Temperature Switching
 Amplifiers
 Solar Inverters
 Switched-Mode Power Supply (SMPS)
 Power Factor Correction (PFC)
Maximum Ratings at Tj = 250 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage
Continuous forward current
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
I²t value
Power dissipation
Operating and storage temperature
VRRM
IF
IF
IF(RMS)
IF,SM
IF,max
∫i² dt
Ptot
Tj , Tstg
TC = 25 °C
TC ≤ 225 °C
TC ≤ 225 °C
TC = 25 °C, tP = 10 ms
TC = 25 °C, tP = 10 µs
TC = 25 °C, tP = 10 ms
TC = 25 °C
Values
1200
8
2.5
4.3
30
120
5
66
-55 to 250
Electrical Characteristics at Tj = 250 °C, unless otherwise specified
Parameter
Symbol
Conditions
Diode forward voltage
Reverse current
Total capacitive charge
Switching time
Total capacitance
VF
IF = 2.5 A, Tj = 25 °C
IF = 2.5 A, Tj = 250 °C
IR
VR = 1200 V, Tj = 25 °C
VR = 1200 V, Tj = 250 °C
QC
ts
IF ≤ IF,MAX
dIF/dt = 200 A/μs
Tj = 210 °C
VR = 400 V
VR = 960 V
VR = 400 V
VR = 960 V
VR = 1 V, f = 1 MHz, Tj = 25 °C
C
VR = 400 V, f = 1 MHz, Tj = 25 °C
VR = 1000 V, f = 1 MHz, Tj = 25 °C
min.
Values
typ.
1.6
2.8
1
25
17
29
< 25
237
25
20
max.
10
200
Thermal Characteristics
Thermal resistance, junction - case
RthJC
3.4
Mechanical Properties
Mounting torque
M
0.6
Unit
V
A
A
A
A
A
A²S
W
°C
Unit
V
µA
nC
ns
pF
°C/W
Nm
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-schottky-rectifiers/
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