1N6097 Datasheet, PDF (1/3 Pages) Microsemi Corporation – 50 Amp Schottky Rectifier

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 30 V to 40V V_RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
1N6097 thru 1N6098R
V_RRM = 30 V - 40 V
I_F(AV) = 50 A
DO-5 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
1N6097 (R)
1N6098 (R)
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
30
21
30
-55 to 150
-55 to 150
40
28
40
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N6097 (R)
Average forward current (per
pkg)
I_F(AV)
T_C = 125 °C
50
Peak forward surge current
(per leg)
I_FSM
t_p = 8.3 ms, half sine
800
Maximum instantaneous
forward voltage (per leg)
V_F
I_FM = 50 A, T_j = 25 °C
0.7
Maximum instantaneous
T_j = 25 °C
1
reverse current at rated DC
I_R
T_j = 100°C
10
blocking voltage (per leg)
T_j = 150 °C
20
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
Mounting torque
R_ΘJC
Inch ponds
(in-pb)
1.30
30
1N6098 (R)
50
800
0.7
1
10
20
1.30
30
Unit
V
V
V
°C
°C
Unit
A
A
V
mA
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1