1N6096R Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – High Surge Capability

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 30 V to 40V V_RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
1N6095 thru 1N6096R
V_RRM = 30 V - 40 V
I_F = 25 A
DO-4 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
1N6095 (R)
1N6096 (R)
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
I_F
I_F,SM
T_j
T_stg
T_C ≤ 100 °C
T_C = 25 °C, t_p = 8.3 ms
30
21
30
25
400
-55 to 150
-55 to 150
40
28
40
25
400
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N6095 (R)
Diode forward voltage
V_F
I_F = 25 A, T_j = 25 °C
0.58
Reverse current
I_R
V_R = 20 V, T_j = 25 °C
V_R = 20 V, T_j = 125 °C
2
250
Thermal characteristics
Thermal resistance, junction -
case
R_thJC
1.8
1N6096 (R)
0.58
2
250
1.8
Unit
V
V
V
A
A
°C
°C
Unit
V
mA
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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