1N3768R Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – High Surge Capability

Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types from 700 V to 1000 V V_RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
1N3765 thru 1N3768R
V_RRM = 700 V - 1000 V
I_F = 35 A
DO-5 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N3765 (R) 1N3766 (R) 1N3767 (R) 1N3768 (R) Unit
Repetitive peak reverse voltage V_RRM
700
800
900
1000
V
RMS reverse voltage
V_RMS
490
560
630
700
V
DC blocking voltage
V_DC
Continuous forward current
I_F
T_C ≤ 140 °C
700
800
900
1000
V
35
35
35
35
A
Surge non-repetitive forward
current, Half Sine Wave
I_F,SM
T_C = 25 °C, t_p = 8.3 ms
475
475
475
475
A
Operating temperature
T_j
Storage temperature
T_stg
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N3765 (R) 1N3766 (R) 1N3767 (R) 1N3768 (R) Unit
Diode forward voltage
V_F
I_F = 35 A, T_j = 25 °C
1.2
1.2
1.2
1.2
V
Reverse current
I_R
V_R = 50 V, T_j = 25 °C
V_R = 50 V, T_j = 140 °C
10
10
10
10
10
10
10
μA
10
mA
Thermal characteristics
Thermal resistance, junction -
case
R_thJC
0.25
0.25
0.25
0.25
°C/W
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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