1N3297AR Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – High Surge Capability

Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types from 1000 V to 1400 V V_RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
1N3295A(R) thru 1N3297A(R)
V_RRM = 1000 V - 1400 V
I_F = 100 A
DO-8 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
1N3295A(R) 1N3296A(R) 1N3297A(R)
Repetitive peak reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
I₂t for fusing
Operating temperature
Storage temperature
V_RRM
V_DC
I_F
I_F,SM
I₂t
T_j
T_stg
T_C ≤ 130 °C
T_C = 25 °C, t_p = 8.3 ms
60 Hz Half wave
1000
1000
100
2300
22000
-55 to 150
-55 to 150
1200
1200
100
2300
22000
-55 to 150
-55 to 150
1400
1400
100
2300
22000
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N3295A(R) 1N3296A(R)
Diode forward voltage
Reverse current
V_F
I_F = 100 A, T_j = 130 °C
1.5
1.5
I_R
V_R = V_RRM, T_j = 130 °C
11
9
Thermal characteristics
Thermal resistance, junction -
case
R_thJC
0.40
0.40
1N3297A(R)
1.5
7
0.40
Unit
V
V
A
A
A²sec
°C
°C
Unit
V
mA
°C/W
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1