1N1206AR Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – High Surge Capability

Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types from 50 V to 600 V V_RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
1N1199A thru 1N1206AR
V_RRM = 50 V - 600 V
I_F = 12 A
DO-4 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N1199A(R) 1N1200A(R) 1N1202A(R) 1N1204A(R) 1N1206A(R) Unit
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
V_RRM
V_RMS
V_DC
I_F
T_C ≤ 150 °C
50
100
200
35
70
140
50
100
200
12
12
12
Surge non-repetitive forward
current, Half Sine Wave
I_F,SM T_C = 25 °C, t_p = 8.3 ms
240
240
240
400
600
V
280
420
V
400
600
V
12
12
A
240
240
A
Operating temperature
T_j
Storage temperature
T_stg
-55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
-55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N1199A(R) 1N1200A(R) 1N1202A(R) 1N1204A(R) 1N1206A(R) Unit
Diode forward voltage
V_F
I_F = 12 A, T_j = 25 °C
1.1
Reverse current
I_R
V_R = 50 V, T_j = 25 °C
V_R = 50 V, T_j = 175 °C
10
15
Thermal characteristics
Thermal resistance, junction -
case
R_thJC
2.00
1.1
10
15
2.00
1.1
10
15
2.00
1.1
1.1
V
10
10
μA
15
15
mA
2.00
2.00 °C/W
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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