1N1183 Datasheet, PDF (1/3 Pages) Vishay Siliconix – Power Silicon Rectifier Diodes, 35 A/40 A/60 A

Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types from 50 to 300 V V_RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
1N1183 thru 1N1187R
V_RRM = 50 V - 300 V
I_F = 35 A
DO-5 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N1183 (R) 1N1184 (R) 1N1186 (R) 1N1187 (R) Unit
Repetitive peak reverse voltage V_RRM
50
100
200
300
V
RMS reverse voltage
V_RMS
35
70
140
210
V
DC blocking voltage
V_DC
Continuous forward current
I_F
T_C ≤ 140 °C
50
100
200
300
V
35
35
35
35
A
Surge non-repetitive forward
current, Half Sine Wave
I_F,SM
T_C = 25 °C, t_p = 8.3 ms
595
595
595
595
A
Operating temperature
T_j
Storage temperature
T_stg
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N1183 (R) 1N1184 (R) 1N1186 (R) 1N1187 (R) Unit
Diode forward voltage
V_F
I_F = 35 A, T_j = 25 °C
1.2
1.2
1.2
1.2
V
Reverse current
I_R
V_R = 50 V, T_j = 25 °C
V_R = 50 V, T_j = 140 °C
10
10
10
10
10
10
10
μA
10
mA
Thermal characteristics
Thermal resistance, junction -
case
R_thJC
0.25
0.25
0.25
0.25
°C/W
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1