150K20A Datasheet, PDF (1/3 Pages) America Semiconductor, LLC – DO8 STUD DEVICES STANDARD RECTIFIER

Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types from 200 V to 1000 V V_RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
150K(R)20A thru 150K(R)100A
V_RRM = 200 V - 1000 V
I_F = 150 A
DO-8 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
150K(R)20A 150K(R)40A 150K(R)60A 150K(R)80A 150K(R)100A Unit
Repetitive peak reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
I₂t for fusing
Operating temperature
Storage temperature
V_RRM
V_DC
I_F
I_F,SM
I₂t
T_j
T_stg
200
200
T_C ≤ 110 °C
150
T_C = 25 °C, t_p = 8.3 ms 3740
t = 8.3ms
58000
-55 to 150
-55 to 150
400
400
150
3740
58000
-55 to 150
-55 to 150
600
600
150
3740
58000
-55 to 150
-55 to 150
800
800
150
3740
58000
-55 to 150
-55 to 150
1000
V
1000
V
150
A
3740
A
58000
-55 to 150
-55 to 150
A²sec
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
150K(R)20A 150K(R)40A 150K(R)60A 150K(R)80A 150K(R)100A Unit
Diode forward voltage
Reverse current
V_F
I_F = 150 A, T_j = 25 °C
1.33
I_R
V_R = V_RRM, T_j = 175 °C
35
1.33
35
1.33
35
1.33
32
1.33
V
24
mA
Thermal characteristics
Thermal resistance, junction -
case
R_thJC
0.25
0.25
0.25
0.25
0.25 °C/W
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