SD101A Datasheet, PDF (2/3 Pages) Semtech Corporation – Silicon Schottky Barrier Diodes for general purpose applications

SD101A THRU SD101C
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Reverse Breakdown Voltage
at I_R = 10 µA
SD101A V_(BR)R
60
–
–
SD101B V_(BR)R
50
–
–
SD101C V_(BR)R
40
–
–
Leakage Current
at V_R = 50 V
at V_R = 40 V
at V_R = 30 V
SD101A I_R
SD101B I_R
SD101C I_R
–
–
200
–
–
200
–
–
200
Forward Voltage Drop
at I_F = 1 mA
at I_F = 15 mA
SD101A V_F
–
–
0.41
SD101B V_F
–
–
0.4
SD101C V_F
–
–
0.39
SD101A V_F
–
–
1
SD101B V_F
–
–
0.95
SD101C V_F
–
–
0.9
Junction Capacitance
at V_R = 0 V, f = 1 MHz
SD101A C_tot
–
–
2.0
SD101B C_tot
–
–
2.1
SD101C C_tot
–
–
2.2
Reverse Recovery Time
at I_F = I_R = 5 mA, recover to 0.1 I_R
t_rr
–
–
1
Thermal Resistance, Junction to Ambient Air
R_thJA
–
–
0.3¹⁾
1) _{Valid provided that leads at a distance of 4 mm from case are kept ambient temperature}
Unit
V
V
V
nA
nA
nA
V
V
V
V
V
V
pF
pF
pF
ns
K/mW