MMBTA56 Datasheet, PDF (2/2 Pages) Samsung semiconductor – PNP (DRIVER TRANSISTOR)

MMBTA56
ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
Collector-Emitter Breakdown Voltage
at -IC = 1 mA, IB = 0 mA
Emitter-Base Breakdown Voltage
at IE = 100 mA, IC = 0
Collector-Emitter Cutoff Current
-VCE = 60 V, -IB = 0
Collector-Base Cutoff Current
-VCB = 80 V, IE = 0
Collector Saturation Voltage
at -IC = 100 mA, -IB = 10 mA
Base-Emitter On Voltage
at -IC = 100 mA, -IB = 10 mA
at -IC = 50 mA, -IB = 5 mA
DC Current Gain
at VCE = 1 V, -IC = 10 mA
at VCE = 1 V, -IC = 100 mA
Gain-Bandwidth Product
at VCE = 1 V, IC = 100 mA, f = 100 MHz
SYMBOL
MIN.
-VBR(CEO)
80
-V(BR)EBO
4.0
-ICES
–
-ICBO
–
-VCEsat
–
-VBE(on)
–
-VBE(on)
–
hFE
100
hFE
100
fT
50
.MAX.
–
–
100
100
0.25
1.2
1.2
–
–
–
UNIT
V
V
nA
nA
V
V
V
–
–
MHz
0.30 (7.5)
0.12 (3)
0.59 (15)
0.03 (0.8)
0.47 (12)
0.2 (5)
.04 (1) _{.08 (2)}
.04 (1)
.08 (2)
0.06 (1.5)
0.20 (5.1)