IDB31 Datasheet, PDF (2/3 Pages) General Semiconductor – PLANAR SILICON BIDIRECTIONAL TRIGGER DIODE

ELECTRICAL CHARACTERISTICS
at Tj = 25 ¡C, unless otherwise specified; electrical characteristics applicable in both, forward and reverse direction
Breakover Voltage
see Fig. 1
Breakover Voltage Symmetry
see Fig. 1
Dynamic Breakback Voltage
(IBO to IF=10mA), see Fig. 1
Output Voltage
see Fig. 2
Breakover Current
see Fig. 1
Rise time
see Fig. 3
Leakage current
VB=0,5·VBO max.
see Fig. 1
SYMBOL
VBO
MIN.
TYP.
30
32
½VBO1½-½VBO2½
-
-
½DV½
5
8
VO
5
-
IBO
4
20
tr
-
100
IB
-
-
MAX.
34
±2
-
-
50
-
0.5
UNIT
Volts
Volts
Volts
Volts
mA
ns
mA
FIG. 1 - CURRENT-VOLTAGE CHARACTERISTICS
+I_F
10mA
-V
V_BO1
I_BO
I_B
+V
0.5 VBO
DV
V_BO2
-I_F