BC337 Datasheet, PDF (2/5 Pages) Motorola, Inc – Amplifier Transistor

BC337, BC338
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
DC Current Gain
at V_CE = 1 V, I_C = 100 mA
Current Gain Group -16 ^hFE
-25 ^hFE
-40 ^hFE
at V_CE = 1 V, I_C = 300 mA
Current Gain Group -16 ^hFE
-25 ^hFE
-40 ^hFE
100
160
250
160
250
400
250
400
630
60
130
–
100
200
–
170
320
–
Collector-Emitter Cutoff Current
at V_CE = 45 V
BC337 I_CES
–
2
100
at V_CE = 25 V
BC338 I_CES
–
2
100
at V_CE = 45 V, T_amb = 125 °C
BC337 I_CES
–
–
10
at V_CE = 25 V, T_amb = 125 °C
BC338 I_CES
–
–
10
Collector-Emitter Breakdown Voltage
at I_C = 10 mA
BC338
V_(BR)CEO
20
–
–
BC337
V_(BR)CEO
45
–
–
Collector-Emitter Breakdown Voltage
at I_C = 0.1 mA
BC338
V_(BR)CES
30
–
–
BC337
V_(BR)CES
50
–
–
Emitter-Base Breakdown Voltage
at I_E = 0.1 mA
V_(BR)EBO
5
–
–
Collector Saturation Voltage
at I_C = 500 mA, I_B = 50 mA
V_CEsat
–
–
0.7
Base-Emitter Voltage
at V_CE = 1 V, I_C = 300 mA
V_BE
–
–
1.2
Gain-Bandwidth Product
at V_CE = 5 V, I_C = 10 mA, f = 50 MHz
f_T
–
100
–
Collector-Base Capacitance
at V_CB = 10 V, f = 1 MHz
C_CBO
–
12
–
Thermal Resistance Junction to Ambient Air
R_thJA
–
–
200¹⁾
1) _{Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case}
Unit
–
–
–
–
–
–
nA
nA
µA
µA
V
V
V
V
V
V
V
MHz
pF
K/W