BC327 Datasheet, PDF (2/5 Pages) Motorola, Inc – Amplifier Transistors(PNP)

BC327, BC328
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
DC Current Gain
at –V_CE = 1 V, –I_C = 100 mA
Current Gain Group-16 ^hFE
-25 ^hFE
-40 hFE
at –V_CE = 1 V, –I_C = 300 mA
Current Gain Group-16 ^hFE
-25 ^hFE
-40 ^hFE
100
160
250
160
250
400
250
400
630
60
130
–
100
200
–
170
320
–
Thermal Resistance Junction to Ambient Air
R_thJA
–
–
200¹⁾
Collector-Emitter Cutoff Current
at –V_CE = 45 V
at –V_CE = 25 V
BC327 –I_CES
–
2
100
BC328 –I_CES
–
2
100
at –V_CE = 45 V, T_amb = 125 °C
BC327 –I_CES
–
–
10
at –V_CE = 25 V, T_amb = 125 °C
BC328 –I_CES
–
–
10
Collector-Emitter Breakdown Voltage
at –I_C = 10 mA
BC327 –
45
–
–
BC328
V_(BR)CEO
25
–
–
–
V_(BR)CEO
Collector-Emitter Breakdown Voltage
at –I_C = 0.1 mA
BC327 –
50
–
–
BC328
V_(BR)CES
30
–
–
–
V_(BR)CES
Emitter-Base Breakdown Voltage
at –I_E = 0.1 mA
–
5
–
–
V_(BR)EBO
Collector Saturation Voltage
at –I_C = 500 mA, –I_B = 50 mA
–V_CEsat
–
–
0.7
Base-Emitter Voltage
at –V_CE = 1 V, –I_C = 300 mA
–V_BE
–
–
1.2
Gain-Bandwidth Product
f_T
–
100
–
at –V_CE = 5 V, –I_C = 10 mA, f = 50 MHz
Collector-Base Capacitance
at –V_CB = 10 V, f = 1 MHz
C_CBO
–
12
–
1) _{Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.}
Unit
–
–
–
–
–
–
K/W
nA
nA
µA
µA
V
V
V
V
V
V
V
MHz
pF