BB745S Datasheet, PDF (2/2 Pages) General Semiconductor – Tuner Diodes

BB745S
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
Reverse Breakdown Voltage
at I_R = 100 µA
V_(BR)R
32
–
–
V
Leakage Current
at V_R = 30 V
I_R
–
–
10
nA
Capacitance, f = 1 MHz
at V_R = 28 V
at V_R = 1 V
C_tot
1.8
–
C_tot
18.5
–
2.2
pF
21.5
pF
Effective Capacitance Ratio, f = 1 MHz
at V_R = 1 to 28 V
C_tot (1 V)
C_tot (28V)
9.0
–
11.0
–
Series Resistance
at f = 470 MHz, C_tot = 14 pF
r_s
–
0.65
–
Ω
Series Inductance
L_S
–
2.5
–
nH
For any two of six consecutive diodes in the carrier tape, the maximum capacitance deviation in the reverse bias
voltage of V_R = 0.5 to 28 V is max. 2.5%