BB729 Datasheet, PDF (2/3 Pages) General Semiconductor – Tuner Diodes

BB729
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
Reverse Breakdown Voltage
at I_R = 100 µA
V_(BR)R
32
–
–
V
Leakage Current
at V_R = 30 V
I_R
–
–
10
nA
Capacitance f = 1 MHz
at V_R = 28 V
at V_R = 1 V
C_tot
2.4
–
C_tot
36.0
–
2.9
pF
42.0
pF
Effective Capacitance Ratio, f = 1 MHz
at V_R = 1 to 28 V
C_tot (1 V)
13.5
–
–
–
C_tot (28V)
Series Resistance
at f = 470 MHz, C_tot = 25 pF
r_s
–
0.80
–
Ω
Series Inductance
L_s
–
2.5
–
nH
For any two of six consecutive diodes in the carrier tape, the maximum capacitance deviation in the reverse
bias voltage of V_R = 0.5 to 28 V is max. 2.5%
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