BAW56 Datasheet, PDF (2/2 Pages) NXP Semiconductors – High-speed double diode

BAW56
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Forward Voltage
at I_F = 1 mA
at I_F = 10 mA
at I_F = 50 mA
at I_F = 150 mA
V_F
–
–
V_F
–
–
V_F
–
–
V_F
–
–
Leakage Current
at V_R = 70 V
at V_R = 70 V, T_j = 150 °C
at V_R = 25 V, T_j = 150 °C
I_R
–
–
I_R
–
–
I_R
–
–
Capacitance
at V_F = V_R = 0, f = 1 MHz
C_tot
–
–
Reverse Recovery Time
from I_F = 10 mA to I_R = 10 mA
measured at I_R = 1 mA, R_L = 100 Ω
t_rr
–
–
Thermal Resistance
Junction to Ambient Air
R_thJA
–
–
1) _{Device on fiberglass substrate, see layout}
.30 (7.5)
.12 (3)
.59 (15)
.03 (0.8)
.47 (12)
0.2 (5)
.04 (1) _{.08 (2)}
.04 (1)
.08 (2)
.06 (1.5)
.20 (5.1)
Dimensions in inches (millimeters)
Layout for R_thJA test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
Max.
Unit
0.715
V
0.855
V
1.0
V
1.25
V
2.5
µA
100
µA
30
µA
2
pF
6
ns
430¹⁾
K/W