BAT48 Datasheet, PDF (2/2 Pages) General Semiconductor – Schottky Diodes

BAT48
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
Reverse Breakdown Voltage
tested with 100 µA Pulses
V_(BR)R
40
–
–
V
Forward Voltage
Pulse Test t_p < 300 µs, δ < 2%
at I_F = 0.1 mA
at I_F = 10 mA
at I_F = 250 mA
V_F
–
–
0.25
V
V_F
–
–
0.40
V
V_F
–
–
0.90
V
Leakage Current
Pulse Test t_p < 300 µs, δ < 2%
at V_R = 10 V
at V_R = 10 V, T_j = 60 °C
at V_R = 20 V
at V_R = 20 V, T_j = 60 °C
at V_R = 40 V
at V_R = 40 V, T_j = 60 °C
I_R
–
–
2
µA
I_R
–
–
15
µA
I_R
–
–
5
µA
I_R
–
–
25
µA
I_R
–
–
25
µA
I_R
–
–
50
µA
Capacitance
at V_R = 1 V, f = 1 MHz
C_tot
–
12
–
pF
Thermal Resistance Junction to Ambient Air
R_thJA
–
–
0.3¹⁾
K/mW
1) _{Valid provided that leads at a distance of 4 mm from the case are kept at ambient temperature (DO-35)}
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