BAS70 Datasheet, PDF (2/2 Pages) NXP Semiconductors – Schottky barrier double diodes

BAS70 THRU BAS70-06
ELECTRICAL CHARACTERISTICS
Ratings for one diode at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Reverse Breakdown Voltage
Tested with 10 µA Pulses
V_(BR)R
70
–
Leakage Current
Pulse Test t_p < 300 µs
at V_R = 50 V
Forward Voltage
Pulse Test t_p < 300 µs
at I_F = 1 mA
at I_F = 15 mA
Capacitance
at V_R = 0 V, f = 1 MHz
I_R
–
20
V_F
–
–
V_F
–
–
C_tot
–
1.5
Reverse Recovery Time
t_rr
from I_F = 10 mA through I_R = 10 mA to I_R = 1 mA
–
–
Thermal Resistance Junction to Ambient Air
R_thJA
–
–
1) _{Device on fiberglass substrate, see layout}
Max.
–
100
410
1000
2
5
430¹⁾
.30 (7.5)
.12 (3)
.59 (15)
.03 (0.8)
.47 (12)
0.2 (5)
.04 (1) _{.08 (2)}
.04 (1)
.08 (2)
.06 (1.5)
.20 (5.1)
Dimensions in inches (millimeters)
Layout for R_thJA test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
Unit
V
nA
mV
mV
pF
ns
K/W