2N4126 Datasheet, PDF (2/5 Pages) NXP Semiconductors – PNP general purpose transistor

2N4126
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
DC Current Gain
at V_CE = –1 V, I_C = –2.0 mA
at V_CE = –1 V, I_C = –50 mA
Collector Cutoff Current
at V_CB = –20 V
h_FE
120
–
360
h_FE
–
60
–
–I_CBO
–
–
50
Emitter Cutoff Current
at V_EB = –3 V
Collector Saturation Voltage
at I_C = –50 mA, I_B = –5 mA
–I_EBO
–
–
50
–V_CESAT
–
–
0.4
Base Saturation Voltage
at I_C = –50 mA, I_B = –5 mA
Collector-Emitter Breakdown Voltage
at I_C = –1 mA
–V_BESAT
–
–
–V_(BR)CEO
25
–
0.95
–
Collector-Base Breakdown Voltage
at I_C = –10 µA
–V_(BR)CBO
25
–
–
Emitter-Base Breakdown Voltage
at I_E = –10 µA
Gain-Bandwidth Product
at V_CE = –5 V, I_C = –10 mA, f = 50 MHz
–V_(BR)EBO
4
f_T
–
–
–
200
–
Collector-Base Capacitance
at V_CB = –10 V, f = 1 MHz
C_CBO
–
12
–
Thermal Resistance Junction to Ambient Air
R_thJA
–
–
200¹⁾
1) _{Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.}
Unit
–
–
nA
nA
V
V
V
V
V
MHz
pF
K/W