MPS2907A Datasheet, PDF (1/3 Pages) Samsung semiconductor – PNP (GENERAL PURPOSE TRANSISTOR)

PRELIMINARY
PRELIMINARY
MPS2907A
SMALL SIGNAL TRANSISTORS (PNP)
PRELIMINARY
TO-92
0.181 (4.6)
0.142 (3.6)
max. ∅ 0.022 (0.55)
0.098 (2.5)
FEATURES
♦ PNP Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
♦ On special request, this transistor is also
manufactured in the pin configuration
TO-18.
♦ This transistor is also available in the
SOT-23 case with the type designation
MMBT2907A.
E
C
B
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation at TA = 25°C
Derate above 25°C
Power Dissipation at TC = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient Air
Thermal Resistance Junction Case
Junction Temperature
Storage Temperature Range
SYMBOL
–VCBO
–VCEO
–VEBO
–IC
Ptot
Ptot
RΘJA
RΘJC
Tj
TS
VALUE
60
60
5.0
600
625
5.0
1.5
12
200
83.3
150
–500 to +150
NOTES:
(1) Valid provided that leads are kept at ambient temperature.
UNIT
Volts
Volts
Volts
mA
mW
mW/°C
mW
mW/°C
°C/W
°C/W
°C
°C
12/16/98