MBRB735 Datasheet, PDF (1/2 Pages) General Semiconductor – SCHOTTKY RECTIFIER

MBRB735 THRU MBRB760
SCHOTTKY RECTIFIER
Reverse Voltage - 35 to 60 Volts Forward Current - 7.5 Amperes
0.320 (8.13)
0.360 (9.14)
SEATING
PLATE
-T-
0.095 (2.41)
0.100 (2.54)
TO-263AB
0.380 (9.65)
0.420 (10.67)
0.245 (6.22)
MIN
K
1K2
0.575 (14.60)
0.625 (15.88)
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.027 (0.686)
0.037 (0.940)
0.090 (2.29)
0.110 (2.79)
0.018 (0.46)
0.025 (0.64)
0.080 (2.03)
0.110 (2.79)
PIN 1
PIN 2
K - HEATSINK
Dimensions in inches and (millimeters)
FEATURES
♦ Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
♦ Metal silicon junction
majority carrier conduction
♦ Low power loss, high efficiency
♦ High current capability, low forward
voltage drop
♦ High surge capability
♦ For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
♦ Guardring for overvoltage protection
♦ High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
MECHANICAL DATA
Case: JEDEC TO-263AB molded plastic body
Terminals: Lead solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounces, 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current (SEE FIG 1)
Peak repetitive forward current (square wave, 20 KHZ)
at TC=105°C
Peak forward surge current, 8.3ms single half sine-
wave superimposed on rated load (JEDEC Method)
Peak repetitive reverse surge current (NOTE 1)
Maximum instantaneous
forward voltage at
(NOTE 2)
IF=7.5A, TC=25°C
IF=7.5A, TC=125°C
IF=15A, TC=25°C
IF=15A, TC=125°C
Maximum instantaneous reverse current at
rated DC blocking voltage
TC=25°C
(NOTE 1)
TC=125°C
Voltage rate of change (rated VR)
Maximum thermal resistance, (NOTE 3)
Operating junction temperature range
Storage temperature range
NOTES:
(1) 2.0µs, pulse width, f=1.0 KHZ
(2) Pulse test: 300µs pulse width, 1% duty cycle
(3) Thermal resistance from junction to case
SYMBOLS
VRRM
VRWM
VDC
I(AV)
IFRM
IFSM
IRRM
VF
IR
dv/dt
RΘJC
TJ
TSTG
MBRB735
35
35
35
MBRB745 MBRB750
45
50
45
50
45
50
7.5
15.0
MBRB760
60
60
60
150.0
1.0
0.5
-
0.75
0.57
0.65
0.84
-
0.72
-
0.1
15.0
10,000
3.0
-65 to +150
-65 to +175
0.5
50.0
1,000
UNITS
Volts
Volts
Volts
Amps
Amps
Amps
Amps
Volts
mA
V/µs
°C/W
°C
°C
4/98