English
Language : 

MBRB1035 Datasheet, PDF (1/2 Pages) General Semiconductor – SCHOTTKY RECTIFIER
MBRB1035 THRU MBRB1060
SCHOTTKY RECTIFIER
Reverse Voltage - 35 to 60 Volts Forward Current - 10.0 Amperes
0.320 (8.13)
0.360 (9.14)
SEATING -T-
PLATE
0.095 (2.41)
0.100 (2.54)
TO-263AB
0.380 (9.65)
0.420 (10.67)
0.245 (6.22)
MIN
K
1K2
0.575 (14.60)
0.625 (15.88)
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.027 (0.686)
0.037 (0.940)
0.090 (2.29)
0.110 (2.79)
0.018 (0.46)
0.025 (0.64)
0.080 (2.03)
0.110 (2.79)
PIN 1
PIN 2
K - HEATSINK
Dimensions in inches and (millimeters)
FEATURES
♦ Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
♦ Metal silicon junction, majority carrier conduction
♦ Low power loss, high efficiency
♦ High current capability,
low forward voltage drop
♦ High surge capability
♦ For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
♦ Guardring for overvoltage protection
♦ High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
MECHANICAL DATA
Case: JEDEC TO-263AB molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounces, 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
(SEE FIG. 1)
Peak repetitive forward current at TC=135°C
(square wave 20 KHZ)
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
Peak repetitive reverse surge current (NOTE 1)
Voltage rate of change (rated VR)
Maximum instantaneous
forward voltage at (NOTE 2)
IF=10A, TC=25°C
IF=10A, TC=125°C
IF=20A, TC=25°C
IF=20A, TC=125°C
Maximum instantaneous reverse current at rated
DC blocking voltage
TC= 25°C
(NOTE 2) TC=125°C
Maximum thermal resistance, junction to case
Operating junction temperature range
Storage temperature range
NOTES:
(1) 2.0µs pulse width, f=1.0 KHZ
(2) Pulse test: 300µs pulse width, 1% duty cycle
SYMBOLS
VRRM
VRWM
VDC
I(AV)
IFRM
MBRB1035
35
35
35
MBRB1045
45
45
45
MBRB1050
50
50
50
10.0
MBRB1060
60
60
60
20.0
IFSM
IRRM
dv/dt
VF
IR
RΘJC
TJ
TSTG
150.0
1.0
0.5
10,000
-
0.80
0.57
0.70
0.84
0.95
0.72
0.85
0.10
15.0
2.0
-65 to +150
-65 to +175
UNITS
Volts
Volts
Volts
Amps
Amps
Amps
Amps
V/µs
Volts
mA
°C/W
°C
°C
4/98