LL103A Datasheet, PDF (1/3 Pages) Semtech Corporation – Silicon Schottky Barrier Diode for general purpose applications

LL103A THRU LL103C
Schottky Diodes
MiniMELF
Cathode Mark
.142 (3.6)
.134 (3.4)
.019 (0.48)
.011 (0.28)
Dimensions in inches and (millimeters)
FEATURES
♦ For general purpose applications.
♦ The LL103A, B, C is a metal-on-silicon
Schottky barrier device which is pro-
tected by a PN junction guard ring.
♦ _{The low forward voltage drop and fast switch-}
ing make it ideal for protection of MOS devices,
steering, biasing and coupling diodes
for fast switching and low logic level applications.
Other applications are click suppression, efficient
full wave bridges in telephone subsets, and blocking
diodes in rechargeable low voltage battery systems.
♦ _{This diode is also available in DO-35 case with}
the type designation SD103A, B, C, and in the
SOD-123 case with type designation
SD103AW, SD103BW, SD103CW.
MECHANICAL DATA
Case: MiniMELF Glass Case SOD-80C
Weight: approx. 0.05 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Peak Inverse Voltage
LL103A
LL103B
LL103C
Power Dissipation (Infinite Heatsink)
T_C = ³/8″ from Body
derates at 4 mW/°C to 0 at 125 °C
V_RRM
V_RRM
V_RRM
P_tot
Junction Temperature
Storage Temperature Range
Single Cycle Surge
60-Hz Sine Wave
T_j
T_S
I_FSM
1) _{Valid provided that electrodes are kept at ambient temperature.}
Value
Unit
40
V
30
V
20
V
400¹⁾
mW
125
°C
–55 to +150
°C
15
A
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