LL101A Datasheet, PDF (1/3 Pages) Semtech Corporation – Silicon Schottky Barrier Diode for general purpose applications

LL101A THRU LL101C
Schottky Diodes
MiniMELF
Cathode Mark
.142 (3.6)
.134 (3.4)
.019 (0.48)
.011 (0.28)
Dimensions in inches and (millimeters)
FEATURES
♦ For general purpose applications.
♦ The LL101 series is a metal-on-silicon
Schottky barrier device which is protected
by a PN junction guard ring. The low forward
voltage drop and fast switching make it ideal
for protection of MOS devices, steering, biasing
and coupling diodes for fast switching and low logic
level applications.
♦ This diode is also available in the DO-35 case with type
designation SD101A, B, C, and in the SOD-123 case
with type designation SD101AW, SD101BW, SD101CW.
MECHANICAL DATA
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Peak Inverse Voltage
LL101A
LL101B
LL101C
V_RRM
V_RRM
V_RRM
Power Dissipation (Infinite Heatsink)
P_tot
Max. Single Cycle Surge
10 µs Square Wave
I_FSM
Junction Temperature
T_j
Storage Temperature Range
T_S
1) _{Valid provided that electrodes are kept at ambient temperature.}
Value
Unit
60
V
50
V
40
V
400¹⁾
mW
2
A
125
°C
–55 to +150
°C
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