GF6968A Datasheet, PDF (1/5 Pages) General Semiconductor – Common-Drain Dual N-Channel MOSFET

GF6968A
Common-Drain Dual N-Channel MOSFET
T _F ^{REENNCHET®}
G _TSSOP-8
Low VGS(th) VDS 20V RDS(ON) 22mΩ ID 6.2A
New ^Product
D S2 S2 G2
8 76 5
0.122 (3.10)
0.114 (2.90)
0.005 (0.127)
8
5
0.177 (4.50)
0.170 (4.30)
0.028 (0.70)
0.020 (0.50)
0.260 (6.60)
0.244 (6.20)
1
4
0.025 (0.65)
0.012 (0.30)
0.010 (0.25)
0°– 8°
0.006 (0.15)
0.002 (0.05)
0.047 (1.20)
0.041 (1.05)
Dimensions in inches
and (millimeters)
1 23 4
D S1 S1 G1
0.260 (6.60) min.
0.028 (0.70)
0.020 (0.50)
0.204 (5.20)
0.012 (0.30)
0.010 (0.25)
0.025 (0.65)
Mounting Pad Layout
Mechanical Data
Case: TSSOP-8 Package
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position: Any
Weight: 0.5g
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low
On-Resistance
• Specially Designed for Li-ion battery packs use
• Designed for battery-switch applications
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150°C)⁽¹⁾
Pulsed Drain Current
Maximum Power Dissipation⁽¹⁾
TA = 25°C
TA = 70°C
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient⁽¹⁾ Thermal Resistance
VDS
VGS
ID
IDM
PD
TJ, Tstg
RθJA
20
± 12
6.2
30
1.5
0.96
–55 to 150
83
Notes: (1) Surface mounted on FR4 board, t ≤ 10 sec.
Unit
V
A
A
W
°C
°C/W
4/11/01