GF4435 Datasheet, PDF (1/5 Pages) General Semiconductor – P-Channel Enhancement-Mode MOSFET

GF4435
P-Channel Enhancement-Mode MOSFET
T _F ^{REENNCHET®}
G _SO-8
VDS – 30V RDS(ON) 20mΩ ID – 8.0A
0.197 (5.00)
0.189 (4.80)
8
1
0.050 (1.27)
5
0.157 (3.99)
0.150 (3.81)
0.244 (6.20)
0.228 (5.79)
4
Dimensions in inches
and (millimeters)
0.020 (0.51)
0.013 (0.33)
0.019
0.010
(0.48)
(0.25)
x
45
°
0.009 (0.23)
0.007 (0.18)
0.009 (0.23)
0.004 (0.10)
0.069 (1.75)
0.053 (1.35)
0°– 8°
0.050(1.27)
0.016 (0.41)
0.245 (6.22)
Min.
0.05 (1.27)
0.04 (1.02)
0.165 (4.19)
0.155 (3.94)
0.035 (0.889)
0.025 (0.635)
0.050 typ.
(1.27)
Mounting Pad Layout
Mechanical Data
Case: SO-8 molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position: Any Weight: 0.5g
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low
On-Resistance
• Specially Designed for Low Voltage DC/DC
Converters
• Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
–30
VGS
± 20
Continuous Drain Current
ID
– 8.0
Pulsed Drain Current
IDM
– 50
Maximum Power Dissipation
TA = 25°C
TA = 70°C
PD
2.5
1.6
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient Thermal Resistance⁽¹⁾
TJ, Tstg
RθJA
–55 to 150
50
Note: (1) Surface Mounted on FR4 Board, t ≤ 10 sec.
Unit
V
A
W
°C
°C/W
7/10/01