BYWB29-50 Datasheet, PDF (1/2 Pages) General Semiconductor – FAST EFFICIENT PLASTIC RECTIFIER

BYWB29-50 THRU BYWB29-200
FAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage - 50 to 200 Volts Forward Current - 8.0 Amperes
0.320 (8.13)
0.360 (9.14)
SEATING _-T-
PLATE
0.095 (2.41)
0.100 (2.54)
TO-263
0.380 (9.65)
0.420 (10.67)
0.245 (6.22)
MIN
K
1K2
0.575 (14.60)
0.625 (15.88)
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.027 (0.686)
0.037 (0.940)
0.090 (2.29)
0.110 (2.79)
0.018 (0.46)
0.025 (0.64)
0.080 (2.03)
0.110 (2.79)
PIN 1
PIN 2
K - HEATSINK
FEATURES
♦ Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
♦ Glass passivated chip junction
♦ Low power loss
♦ Low leakage current
♦ High surge current capability
♦ Superfast recovery time for high efficiency
♦ High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
MECHANICAL DATA
Case: JEDEC TO-263AB molded plastic body
Terminals: Plated lead solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TC=125°C
Peak forward surge current 10ms
single half sine-wave superimposed TJ=150°C
Maximum instantaneous forward voltage at:
IF=20A, TJ=25°C
IF=8A, TJ=150°C
Maximum DC reverse current
at rated DC blocking voltage
TC=25°C
TC=100°C
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Maximum thermal resistance (NOTE 3)
Operating and storage temperature range
SYMBOLS
VRRM
VRMS
VDC
BYWB29-50 BYWB29-100 BYWB29-150 BYWB29-200 UNITS
50
100
150
200
Volts
35
70
105
140
Volts
50
100
150
200
Volts
I(AV)
8.0
Amps
IFSM
100.0
Amps
VF
IR
trr
CJ
RΘJC
TJ, TSTG
1.3
0.8
10.0
500.0
25.0
45.0
3.0
-65 to +150
Volts
µA
ns
pF
°C/W
°C
NOTES:
(1) Reverse recovery test conditions: IF=1A, VR=30V, di/dt=100A/µs, Irr=10%, IRM for measurement of trr
(2) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to case mounted on heatsink
4/98